منابع مشابه
Fundamentals of ion mobility spectrometry.
Fundamental questions in ion mobility spectrometry have practical implications for analytical applications in general, and omics in particular, in three respects. (1) Understanding how ion mobility and collision cross section values depend on the collision gas, on the electric field and on temperature is crucial to ascertain their transferability across instrumental platforms. (2) Predicting co...
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Ion implantation is a surface modification technology to produce new material on the surface by impingement of high energy ions from the ion accelerator. In this work, AISI 304 stainless steels were coated with 90 nm Ni film by electron beam deposition and implanted by a flow of 5×1017 N cm−2 at 400 K temperature with different implantation energies of 10, 20, 30 and 40 keV. The prepared sample...
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We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electric...
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ITEP in collaboration with MEPHI and HCEI (Tomsk) develops the high intensity ion beam generation and transport systems for low energy (1 – 50 keV) ion implantation. Such facilities are used for semiconductor technology. The Bernas type ion source is used for the ribbon ion beam production. The periodical system of electrostatic lenses (electrostatic undulator) was proposed for ribbon beam tran...
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Experiments are reported in which two configurations for ablation-plasma-ion-implantation ~APII! are characterized by diagnostics and compared. The first configuration oriented the target parallel to the deposition substrate. This orientation yielded ion-beam-assisted deposition of thin films. A delay (.5 ms) between laser and high voltage was necessary for this geometry to avoid arcing between...
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ژورنال
عنوان ژورنال: Jitsumu Hyomen Gijutsu
سال: 1987
ISSN: 1884-3417,0368-2358
DOI: 10.4139/sfj1970.34.368